APJ10N65FITIP (AP65R950)

650V N-Channel Enhancement Mode MOSFET

APJ10N65F/P/T RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVDSS

Drain to source breakdown voltage

VGS=0V, ID=250uA

650

700

--

V

ΔBVDSS / ΔTJ

Breakdown voltage temperature coefficient

ID=250uA, referenced to 25oC

--

0.7

--

V/oC

IDSS

Drain to source leakage current

VDS=650V, VGS=0V

--

--

1

uA

VDS=520V, TC=125oC

--

--

50

uA

IGSS

Gate to source leakage current, forward

VGS=30V, VDS=0V

--

--

100

nA

Gate to source leakage current, reverse

VGS=-30V, VDS=0V

--

--

-100

nA

VGS(TH)

Gate threshold voltage

VDS=VGS, ID=250uA

2.5

3.3

4.5

V

RDS(ON)

Drain to source on state resistance

--

860

950

mΩ

Ciss

Input capacitance

VGS=0V, VDS=100V, f=1MHz

--

263

--

pF

Coss

Output capacitance

--

13.7

--

Crss

Reverse transfer capacitance

--

1.06

--

td(on)

Turn on delay time

VDS=400V, ID=2.2A，

RG=4.7Ω , VGS=10V

--

12.8

--

ns

tr

Rising time

--

26.4

--

td(off)

Turn off delay time

--

22.2

--

tf

Fall time

--

75.6

--

Qg

Total gate charge

VDS=480V, VGS=10V, ID=2A

--

1.07

nC

Qgs

Gate-source charge

--

3.63

--

Qgd

Gate-drain charge

--

7.72

--

IS

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

--

--

5

A

ISM

Pulsed source current

--

--

15

A

VSD

Diode forward voltage drop.

IS=3.2A, VGS=0V

--

0.7

1.5

V

Trr

Reverse recovery time

dIF/dt=100A/us,

--

313

--

ns

Qrr

Reverse recovery Charge

--

0.92

--

uC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The EAS data shows Max. rating . L=0.5mH, IAS =2.3A, VDD =50V, RG=25Ω

3、The test condition is Pulse Test: ISD ≤ ID, di/dt = 100A/us, VDD≤ BVDSS, Starting at TJ =25℃

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

VGS=10V, ID =1.5A

IS=1.5A, VGS=0V, Vdd=400V,