APJ10N65P datasheet(1/7 Pages) APME

Part #	APJ10N65P

Description	650V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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APJ10N65FITIP (AP65R950)

650V N-Channel Enhancement Mode MOSFET

APJ10N65F/P/T RVE1.0

永源微電子科技有限公司

Description

The APJ10N65F/T/P is CoolFET II MOSFET family

that is utilizing charge balance technology for extremely

low on-resistance and low gate charge performance.

APJ10N65F/P/T is suitable for applications which require

superior power density and outstanding efficiency

General Features

VDS = 650V （Type：730V） IDM =10A

RDS(ON) < 950mΩ @ VGS=10V （Type：890mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

APJ10N65F

TO-220F-3L

APJ10N65F XXX YYYY

1000

APJ10N65P

TO-220-3L

APJ10N65P XXX YYYY

1000

APJ10N65T

TO-263-3L

APJ10N65T XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage (VGS = 0V)

650

V

ID

Continuous Drain Current

5.5

A

IDM

Pulsed Drain Current

(note1)

14

A

VGS

Gate-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy (note2)

125

mJ

PD

Power Dissipation (TC = 25ºC)

25.5

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

ºC

RthJC

Thermal Resistance, Junction-to-Case

4.9

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

49

ºC/W

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APJ10N65P Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

APJ10N65P Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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