APJ12N65FIPIT (AP65R850)

650V N-Channel Enhancement Mode MOSFET

APJ12N65F/P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVDSS

Drain to source breakdown voltage

VGS=0V, ID=250uA

650

740

--

V

IDSS

Drain to source leakage current

VDS=650V, VGS=0V

--

--

1

uA

IGSS

Gate to source leakage current, forward

VGS=30V, VDS=0V

--

--

100

nA

Gate to source leakage current, reverse

VGS=-30V, VDS=0V

--

--

-100

nA

VGS(TH)

Gate threshold voltage

VDS=VGS, ID=250uA

2.8

3.3

3.8

V

RDS(ON)

Drain to source on state resistance

VGS=10V, ID=2.5A

--

750

850

mΩ

Rg

Gate resistance

f=1 MHz, open drain

--

30

--

Ω

Ciss

Input capacitance

VGS=0V, VDS=50V, f=1MHz

--

339

--

pF

Coss

Output capacitance

--

25

--

Crss

Reverse transfer capacitance

--

1.36

--

td(on)

Turn on delay time

VDS=325V, ID=5A

，

RG=25Ω,VGS=10V

--

31

--

ns

tr

Rising time

--

15

--

td(off)

Turn off delay time

--

56.5

--

tf

Fall time

--

12.5

--

Qg

Total gate charge

VDS=325V, VGS=10V, ID=5A

--

8.1

--

nC

Qgs

Gate-source charge

--

1.8

--

Qgd

Gate-drain charge

--

3.2

--

IS

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

--

--

5

A

ISM

Pulsed source current

--

--

15

A

VSD

Diode forward voltage drop.

IS=5A, VGS=0V

--

0.88

1.3

V

Trr

Reverse recovery time

IS=5A, VGS=0V,

dIF/dt=100A/us

--

162

--

ns

Qrr

Reverse recovery charge

--

1093

--

nC

Irrm

Peak reverse recovery current

--

13.5

--

A

VSD

Gate Plateau Voltage

5.4

--

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The EAS data shows Max. rating . L=0.5mH, IAS =2.3A, VDD =50V, RG=25Ω

3、The test condition is Pulse Test: ISD ≤ ID, di/dt = 100A/us, VDD≤ BVDSS, Starting at TJ =25℃

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.