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APJ12N70P Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # APJ12N70P
Description  700V N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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APJ12N70P Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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APJ12N70FIPIT (AP70R850)
700V N-Channel Enhancement Mode MOSFET
APJ12N70F/P/T REV1.0
永源微電子科技有限公司
Description
The APJ12N70F/P/T is CoolFET II MOSFET family
that is utilizing charge balance technology for extremely
low on-resistance and low gate charge performance.
APJ12N70F/P/T is suitable for applications which require
superior power density and outstanding efficiency
General Features
VDS = 700V （Type：730V） IDM =12A
RDS(ON) < 850mΩ @ VGS=10V （Type：750mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
APJ12N70F
TO-220F-3L
APJ12N70F XXX YYYY
1000
APJ12N70P
TO-220-3L
APJ12N70P XXX YYYY
1000
APJ12N70T
TO-263-3L
APJ12N70T XXX YYYY
800
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
700
V
ID
Continuous Drain Current
6.5
A
IDM
Pulsed Drain Current
(note1)
12
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy (note2)
125
mJ
PD
Power Dissipation (TC = 25ºC)
25.5
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
4.9
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
49
ºC/W


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