APJ12N80FIPIT(AP80R900)

800V N-Channel Enhancement Mode MOSFET

APJ12N80F/P/T RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS=0V, ID=250μA

800

-

-

V

V(GS)th

Gate threshold voltage

VDS=VGS, ID=250μA

2.5

3.5

4.5

V

IDSS

Zero gate voltage drain current

VDS=800V, VGS=0V, Tj=25°C

-

-

1

μA

IDSS

Zero gate voltage drain current

VDS=800V, VGS=0V, Tj=150°C

10

μA

IGSS

Gate-source leakage current

VGS=±30V, VDS=0V

-

-

±100

nA

RDS(on)

Drain-source on-state resistance

VGS=10V, ID=2.5A, Tj=25°C

-

800

900

mΩ

RDS(on)

Drain-source on-state resistance

VGS=10V, ID=2.5A, Tj=150°C

2000

5000

mΩ

Ciss

Input capacitance

VGS=0V, VDS=50V, f=1MHz

-

541

-

pF

Coss

Output capacitance

-

31.6

-

pF

Crss

Reverse transfer capacitance

-

1.33

-

pF

td(on)

Turn-on delay time

VDD=400V, VGS=13V, ID=2.2A,

-

17.6

-

ns

tr

Rise time

-

22.4

-

ns

td(off)

Turn-off delay time

-

64.2

-

ns

tf

Fall time

-

28.2

-

ns

Qgs

Gate to source charge

VDD=400V, ID=4A, VGS=0 to

10V

-

2.7

-

nC

Qgd

Gate to drain charge

-

4.97

-

nC

Qg

Gate charge total

-

10.7

-

nC

Vplateau

Gate plateau voltage

-

5.42

-

V

VSD

Diode forward voltage

VGS=0V, IF=5A, Tf=25°C

-

0.86

-

V

trr

Reverse recovery time

VR=400V, IF=1.1A,

diF/dt=100A/μs

-

181

-

ns

Qrr

Reverse recovery charge

-

0.74

-

μC

Irrm

Peak reverse recovery current

-

8.68

-

A

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The EAS data shows Max. rating . L=0.5mH, IAS =5.0A, VDD =50V, RG=25Ω

3、The test condition is Pulse Test: ISD ≤ ID, di/dt = 100A/us, VDD≤ BVDSS, Starting at TJ =25℃

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.