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APJ12N80P Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # APJ12N80P
Description  800V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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APJ12N80P Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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APJ12N80FIPIT(AP80R900)
800V N-Channel Enhancement Mode MOSFET
APJ12N80F/P/T RVE1.0
永源微電子科技有限公司
Description
The APJ12N80F/T/P is CoolFET II MOSFET family
that is utilizing charge balance technology for extremely
low on-resistance and low gate charge performance.
APJ12N80F/T/P is suitable for applications which require
superior power density and outstanding efficiency
General Features
VDS = 800V （Type：890V） IDM =12A
RDS(ON) <900mΩ @ VGS=10V （Type：800mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
APJ12N80F
TO-220F-3L
APJ12N80G XXX YYYY
1000
APJ12N80P
TO-220-3L
APJ12N80P XXX YYYY
1000
APJ12N80T
TO-263-3L
APJ12N80T XXX YYYY
800
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
650
V
ID
Continuous Drain Current
6
A
IDM
Pulsed Drain Current
(note1)
12
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy (note2)
225
mJ
PD
Power Dissipation (TC = 25ºC)
25.5
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
2
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
62.5
ºC/W


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