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GS71108ATP Datasheet(PDF) 7 Page - List of Unclassifed Manufacturers

Part # GS71108ATP
Description  128K x 8 1Mb Asynchronous SRAM
PDF  16 Pages
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Manufacturer  ETC2 [List of Unclassifed Manufacturers]
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GS71108ATP Datasheet(HTML) 7 Page - List of Unclassifed Manufacturers

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Write Cycle
Parameter
Symbol
-7
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write cycle time
tWC
7
—
8
—
10
—
12
—
ns
Address valid to end of write
tAW
5
—
5.5
—
7
—
8
—
ns
Chip enable to end of write
tCW
5
—
5.5
—
7
—
8
—
ns
Data set up time
tDW
3
—
4
—
5
—
6
—
ns
Data hold time
tDH
0
—
0
—
0
—
0
—
ns
Write pulse width
tWP
5
—
5.5
—
7
—
8
—
ns
Address set up time
tAS
0
—
0
—
0
—
0
—
ns
Write recovery time (WE)
tWR
0
—
0
—
0
—
0
—
ns
Write recovery time (CE)
tWR1
0
—
0
—
0
—
0
—
ns
Output Low Z from end of write
tWLZ*
3
—
3
—
3
—
3
—
ns
Write to output in High Z
tWHZ*
—
3
—
3.5
—
4
—
5
ns
GS71108ATP/J/SJ/U
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.08 6/2006
7/16
© 2001, GSI Technology
* These parameters are sampled and are not 100% tested
tWC
Address
CE
WE
Data In
OE
Data Out
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tWLZ
tWHZ
DATA VALID
HIGH IMPEDANCE
Write Cycle 1: WE control



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