APJ100N65MP (AP65R090)

650V N-Channel Enhancement Mode MOSFET

APJ100N65MP RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS=0V, ID=1mA

650

740

-

V

V(GS)th

Gate threshold voltage

VDS=VGS, ID=1mA

2.0

3.0

5.0

V

IDSS

Zero gate voltage drain current

VDS=650V, VGS=0V, Tj=25°C

-

-

10

μA

IGSS

Gate-source leakage current

VGS=±30V, VDS=0V

-

-

±100

nA

RDS(on)

Drain-source on-state resistance

VGS=10V, ID=18A, Tj=25°C

-

78

90

mΩ

RG

Gate resistance

VDD=0V,VGS=0V,F=1MHz

-

10

-

Ω

Ciss

Input capacitance

VGS=0V, VDS=50V, f=250KHz

-

2600

-

pF

Coss

Output capacitance

-

147

-

pF

Crss

Reverse transfer capacitance

-

10

-

pF

td(on)

Turn-on delay time

VDD=400V, VGS=10V, ID=18A

-

54

-

ns

tr

Rise time

-

69

-

ns

td(off)

Turn-off delay time

-

123

-

ns

tf

Fall time

-

20

-

ns

Qgs

Gate to source charge

VDD=400V, ID=18A, VGS=0

-

10

-

nC

Qgd

Gate to drain charge

-

24

-

nC

Qg

Gate charge total

-

63

-

nC

Vplateau

Gate plateau voltage

-

3.5

-

V

VSD

Diode forward voltage

VGS=0V, IF=18A, Tf=25°C

-

0.9

-

V

trr

Reverse recovery time

VR=400V, IF=18A,

diF/dt=100A/μs

-

161

-

ns

Qrr

Reverse recovery charge

-

1.64

-

μC

Irrm

Peak reverse recovery current

-

15

-

A

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The EAS data shows Max. rating . L=0.5mH, IAS =7A, VDD =50V, RG=25Ω

3、The test condition is Pulse Test: ISD ≤ ID, di/dt = 100A/us, VDD≤ BVDSS, Starting at TJ =25℃

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.