APM001A

40V N-Channel Enhancement Mode BJT MOSFET

APM001A REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

40

-

-

V

V(BR)CBO

Collector-base breakdown voltage

IC=-10µA, IE=0

-40

V

V(BR)CEO

Collector-emitter breakdown voltage

IC=-1mA, IB=0

-40

V

V(BR)EBO

Emitter-base breakdown voltage

IE=-10µA, IC=0

-5

V

IDSS

Zero Gate Voltage Drain Current

VDS=60V, VGS = 0V,

-

-

1

μA

ICEX

Collector cut-off current

VCE=-30V, VEB(off)=-3V

-50

nA

ICBO

Collector cut-off current

VCB=-40V, IE=0

-100

nA

IEBO

Emitter cut-off current

VEB=-5V, IC=0

-100

nA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±20V

-

-

±10

uA

VCE(sat)

Collector-emitter saturation voltage

IC=-50mA, IB=-5mA

-0.3

V

VBE(sat)

Base-emitter saturation voltage

-0.95

V

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

1.5

2.5

V

RDS(on)

Static Drain-Source on-Resistance

VGS=10V, ID=0.3A

-

1800

2800

mΩ

VGS =4.5V, ID =0.2A

-

2200

3000

Ciss

Input Capacitance

VDS=25V, VGS=0V,

f=1.0MHz

-

28

-

pF

Coss

Output Capacitance

-

11

-

pF

Crss

Reverse Transfer Capacitance

-

4

-

pF

Qg

Total Gate Charge

VDS=10V, ID=0.3A,

VGS=4.5V

-

1.7

-

nC

Qgs

Gate-Source Charge

-

0.3

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

0.6

-

nC

td(on)

Turn-on Delay Time

VDD=10V, ID=0.2A,

RGEN=10Ω,VGS=10V,

-

2

-

ns

tr

Turn-on Rise Time

-

15

-

ns

td(off)

Turn-off Delay Time

-

7

-

ns

tf

Turn-off Fall Time

-

20

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

0.3

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

1.2

A

VSD

Drain to Source Diode Forward

Voltage

VGS = 0V, IS =0.3A

-

-

1.2

V

hFE(1)

DC current gain(1)

VCE=-1V, IC=-10mA

100

300

hFE(2)

DC current gain(2)

VCE=-1V, IC=-50mA

60

hFE(3)

DC current gain(3)

VCE=-1V, IC=-100mA

30

fT

Transition frequency

VCE=-20V,

IC=10mA,f=100MHz

300

MHz

td

Delay time

VCC=-3V, VBE(off)=-0.5V,

IC=-10mA, IB1=IB2=-1mA

35

ns

tr

Rise time

35

ns

ts

Storage time

VCC=-3V, IC=-10mA,

IB1=IB2=-1mA

225

ns

tf

Fall time

75

ns

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.