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M39208 Datasheet(PDF) 16 Page - STMicroelectronics |
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M39208 Datasheet(HTML) 16 Page - STMicroelectronics |
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16 / 30 page ![]() Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current 0V ≤ VIN ≤ VCC ±1 µA ILO Output Leakage Current 0V ≤ VOUT ≤ VCC ±1 µA ICC1 (1) Supply Current (Read Flash) TTL EE = VIH, EF = VIL, G = VIH, f = 6MHz 15 mA ICC2 Supply Current (Read EEPROM) TTL EE = VIL, EF = VIH, G = VIH, f = 6MHz 15 mA ICC3 Supply Current (Standby) CMOS EF = EE = VCC ± 0.2V 60 µA ICC4 Supply Current (Flash Block Program or Erase) Byte program, Sector or Chip Erase in progress 20 mA ICC5 Supply Current (EEPROM Write) During tWC 20 mA ICC6 Supply Current in Deep Power Down Mode After a Deep Power Down instruction (see Table 4) 2 µA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 0.7 VCC VCC + 0.3 V VOL Output Low Voltage IOL = 1.8mA 0.45 V VOH Output High Voltage IOH = –100 µAVCC –0.4 V VID A9 High Voltage 11.5 12.5 V IID VID Current A9 = VID 100 µA VLKO VCC Minimum for Write, Erase and Program 2 2.3 V Note: 1. When reading the Flash block when an EEPROM byte(s) is under a write cycle, the supply current is ICC1 + ICC5. Table 12. DC Characteristics (TA = 0 to 70 °C or –20 to 85°C or –40 to 85°C; VCC = 2.7 V to 3.6V) GLOSSARY Block: EEPROM block (64 Kbit) or Flash block (2 Mbit) Bulk: the whole Flash block (2 Mbit) Sector: 64 Kbyte of Flash memory Page: 64 bytes of EEPROM Write and Program: Writing (into the EEPROM block) and programming (the Flash block) is not performed in a similar way: – the Flash memory requires an instruction (see Instruction chapter) for Erasing and another in- struction for Programming one (or more) byte(s) – the EEPROM memory is directly written with a simple operation (see Operation chapter). SDP: Software Data Protection. Used for protect- ing the EEPROM block against false Write opera- tions (as in noisy environments). 16/30 M39208 |
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