M39208NA datasheet(10/30 Pages) STMICROELECTRONICS

10 / 30 page

Write OTP Row

Writing (only one time) in the OTP row (64 bytes)

is enabled by an instruction. This instruction is

composed of three specific Write operations of data

bytes at three specific memory locations (each

location in a different page) followed by the the data

to store in the OTP row (refer to Table 4).

When accessing the OTP row, the only LSB ad-

dresses (A6 to A0) are decoded, with A6 = ’0’.

Write the EEPROM Block Identifier

The EEPROM block identifier can be written with a

single Write operation with specific logic levels

applied on A6 and the VID level on A9 (see Table

7).

PROGRAM in the Flash BLOCK

It should be noted that writing data into the

EEPROM block and the Flash block is not per-

formed in a similar way: the Flash memory requires

an instruction (see Instruction chapter) for Erasing

and another instruction for Programming one (or

more) byte(s), the EEPROM memory is directly

written with a simple operation (see Operation

chapter).

Program Instuction. During the execution of the

Program instruction, the Flash block memory will

not accept any further instructions.

The Flash block memory can be programmed byte-

by-byte. The program instruction is a sequence of

three specific Write operations followed by writing

the address and data byte to be programmed into

the Flash block memory (see Table 4). The M39208

automatically starts and performs the programming

after the fourth write operation.

During programming, the memory status may be

checked by reading the status bits DQ5, DQ6 and

DQ7, as detailed in the following sections.

READ DQ5 & DQ7

at VALID ADDRESS

START

READ DQ7

FAIL

PASS

AI01369

DQ7

DATA

YES

DQ5

= 1

DQ7

DATA

YES

Figure 6. Data Polling Flowchart

READ

DQ5 & DQ6

START

READ DQ6

FAIL

PASS

AI01370

DQ6

TOGGLE

YES

DQ5

= 1

YES

DQ6

TOGGLE

Figure 7. Data Toggle Flowchart

10/30

M39208

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