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22

isc Silicon PNP Power Transistor

TCS12J

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

BVCEO

Collector-Emitter Breakdown Voltage

IC= -1mA ; IB= 0A

-200

--

V

BVCBO

Collector-Base Breakdown Voltage

IC= -1mA ; IE= 0A

-200

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -50mA

--

-1.0

V

ICBO

Collector Cutoff Current

VCE= -200V ; IB= 0A

--

-0.1

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0A

--

-0.1

mA

hFE

DC Current Gain

IC= -1A ; VCE= -10V

60

100

--

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