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2N3634 Datasheet(PDF) 2 Page - Silicon Supplies |
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2N3634 Datasheet(HTML) 2 Page - Silicon Supplies |
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2 / 3 page ![]() Absolute Maximum Ratings T A = 25°C unless otherwise stated Rev 1.0 31/01/25 PNP Transistor Bare Die, 2N3634 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1 A Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to 150 °C Electrical Characteristics T A = 25°C unless otherwise stated 1. Pulse Test: pulse width = 300µs, duty cycle < 2.0% 2. Not production testing in die form, characterized by chip design & package verification. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO IC = -100µA -140 - - V Collector-Emitter Breakdown Voltage 1 V(BR)CEO IC = -10mA -140 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10µA -5 - - V VCB = -100V - - -100 nA Collector Cut-off Current ICBO VCB = -140V - - -10 µA VEB = -3V - - -50 nA Emitter Cut-off Current IEBO VEB = -5V - - -10 µA ON CHARACTERISTICS 1 VCE = -10V, IC = -0.1mA 25 - - - VCE = -10V, IC = -1mA 45 - - - VCE = -10V, IC = -10mA 50 - - - VCE = -10V, IC = -50mA 50 - 150 - Forward-Current Transfer Ratio hFE VCE = -10V, IC = -150mA 30 - - - IC = -10mA, IB = -1mA - - -0.3 V Collector-Emitter Saturation Voltage VCE(sat) IC = -50mA, IB = -5mA - - -0.6 V IC = -10mA, IB = -1mA - - -0.8 V Base Saturation Voltage VBE(sat) IC = -50mA, IB = -5mA -0.65 - -0.9 V SMALL SIGNAL CHARACTERISTICS 2 Forward Current Transfer Ratio |hfe| VCE = -30V, IC = -30mA, f = 100MHz 1.5 - 8.0 - Forward Current Transfer Ratio hfe VCE = -10V, IC = -10mA, f = 1kHz 40 - 160 - Output Capacitance Cobo VCB = -20V,IE = 0,100kHz ≤ f ≤1MHz - - 10 pF Input Capacitance Cibo VEB = -1V,IC = 0, 100kHz ≤ f ≤ 1MHz - - 75 pF VCE = 10V, IC = 0.5mA, Rg = 1kΩ, f = 100Hz - - 5 dB Noise Figure NF VCE = 10V, IC = 0.5mA, Rg = 1kΩ, 1kHz ≤ f ≤10kHz - - 3 dB Page 2 of 3 www.siliconsupplies.com |
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