General Purpose Transistor

Typical Rating and Characteristic Curves (MMST2222A-HF)

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-base breakdown voltage

IC = 10μA, IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain (Note 1)

IC = 10mA, IB = 0

IE = 10μA, IC = 0

VCB = 70V, IE = 0

VCE = 35V, IB = 0

VEB = 3V, IC = 0

VCE = 10V, IC = 150mA

VCE = 10V, IC = 0.1mA

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

hFE(1)

hFE(2)

V

V

V

nA

nA

nA

VCE = 10V, IC = 10mA

hFE(3)

VCE = 10V, IC = 500mA

hFE(4)

VCE = 1V, IC = 150mA

hFE(5)

Transition frequency

Delay time

Storage time

Rise time

Fall time

VCE = 20V, IC = 20mA, f = 100MHZ

VCC = 30V, VBE(off) = -0.5V

IC = 150mA, IB1 = 15mA

VCC = 30V, IC = 150mA

IB1 = IB2 = 15mA

fT

td

tr

ts

tf

MHZ

ns

ns

Output capacitance

Cob

VCB = 10V, IE = 0, f = 1MHZ

pF

Base-emitter saturation voltage (Note 1)

Collector-emitter saturation voltage (Note 1)

IC = 500mA, IB = 50mA

IC = 500mA, IB = 50mA

VCE(sat)

VBE(sat)

V

V

IC = 150mA, IB = 15mA

IC = 150mA, IB = 15mA

Comchip Technology CO., LTD.

Page 2

REV:A

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

0

2

4

6

8

10

12

0

0.05

0.10

0.15

0.20

0.25

IB=0.1mA

0.2mA

0.3mA

0.4mA

0.5mA

0.6mA

0.7mA

0.8mA

0.9mA

1.0mA

Common emitter

TA=25°C

Fig.2 - hFE ― IC

Collector Current, IC (mA)

0.1

1

10

100

600

0

100

200

300

400

500

Common emitter

VCE=10V

Typ

TA=25°C

TA=100°C

QW-JTR167

Note: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%.

75

40

6

100

100

100

100

300

35

75

40

35

1.0

0.3

2.0

1.2

300

8

10

25

225

60