Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Emitter cut-off current

0.1

V

V

V

µA

V(BR)CEO

V(BR)CBO

V(BR)EBO

IEBO

IC = 1mA, IB = 0

IC = 100μA, IE = 0

IE = 100μA, IC = 0

VCE = 20V, IB = 0

Min

40

25

5

Collector cut-off current

DC current gain

0.1

400

ICEO

hFE(1)

VEB = 5V, IC = 0

120

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.6

1.2

V

V

VCE(sat)

VBE(sat)

IC = 500mA, IB = 50mA

Transition frequency

fT

VCE = 6V, IC = 20mA, f = 30MHz

150

hFE(2)

50

Collector cut-off current

0.1

ICBO

VCB = 40V, IE = 0

VCE = 1V, IC = 50mA

MHz

VCE = 1V, IC = 500mA

IC = 500mA, IB = 50mA

Range

Rank

Classification of hFE (1)

S8050-L-HF

S8050-J-HF

120-200

200-350

S8050-H-HF

300-400

µA

µA

Rating and Characteristic Curves (S8050-L/H/J-HF)

Collector-Emitter Voltage, VCE (V)

Fig.1 - Static Characteristic

0

4

8

12

16

20

20

0

40

60

80

100

Common

Emitter

Ta = 25°C

400µA

100µA

150µA

200µA

250µA

300µA

350µA

IB=50µA

100

1000

10

1

Collector Current, IC (mA)

10

Fig.2 - hFE ― IC

100

500

Common Emitter

VCE=1V

Ta=25°C

Ta=100°C

Comchip Technology CO., LTD.

General Purpose Transistors

QW-JTR109

REV:B

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