DMP6018LPSQ

Document number: DS42662 Rev. 3 - 2

3 of 9

www.diodes.com

October 2020

© Diodes Incorporated

DMP6018LPSQ

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-60

—

—

V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

—

—

-1

μA

VDS = -60V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

-1.5

—

-2.5

V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

—

13

18

m

Ω

VGS = -10V, ID = -17A

—

22

26

VGS = -4.5V, ID = -5A

Diode Forward Voltage

VSD

—

-0.76

-1.0

V

VGS = 0V, IS = -17A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

3505

—

pF

VDS = -30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

516

—

Reverse Transfer Capacitance

Crss

—

200

—

Gate Resistance

RG

—

9.1

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V)

Qg

—

7.1

—

nC

VDS = -30V, ID = -10A

Total Gate Charge (VGS = -10V)

Qg

—

13.7

—

Gate-Source Charge

Qgs

—

1.8

—

Gate-Drain Charge

Qgd

—

3.5

—

Turn-On Delay Time

tD(ON)

—

3.9

—

ns

VDD = -30V, VGS = -10V,

ID = -10A, RG = 2.5Ω

Turn-On Rise Time

tR

—

6.7

—

Turn-Off Delay Time

tD(OFF)

—

16.0

—

Turn-Off Fall Time

tF

—

7.2

—

Body Diode Reverse Recovery Time

tRR

—

32

—

ns

IS = -17A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—

28

—

nC

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.