M48T513YPM datasheet(16/23 Pages) STMICROELECTRONICS

16 / 23 page

M48T513Y, M48T513V

16/23

Table 13. Reset AC Characteristics

(TA = 0 to 70 °C, VCC = 3.0V to 3.6V or VCC = 4.5V to 5.5V)

Note: 1. CL = 5pF (see Figure 5)

Symbol

Parameter

Min

Max

Unit

RSTIN Low to RST Low

100

tRHRZ

(1)

RSTIN High to RST Hi-Z

200

Figure 14. RSTIN Timing Waveform

AI02585

tRHRZ

RSTIN

RST

Hi-Z

POWER SUPPLY DECOUPLING

and UNDERSHOOT PROTECTION

ICC transients, including those produced by output

switching, can produce voltage fluctuations, re-

sulting in spikes on the VCC bus. These transients

can be reduced if capacitors are used to store en-

ergy, which stabilizes the VCC bus. The energy

stored in the bypass capacitors will be released as

low going spikes are generated or energy will be

absorbed when overshoots occur. A ceramic by-

pass capacitor value of 0.1

µF (see Figure 15) is

recommended in order to provide the needed fil-

tering. In addition to transients that are caused by

normal SRAM operation, power cycling can gener-

ate negative voltage spikes on VCC that drive it to

values below VSS by as much as one volt. These

negative spikes can cause data corruption in the

SRAM while in battery backup mode. To protect

from these voltage spikes, ST recommends con-

necting a schottky diode from VCC to VSS (cathode

connected to VCC, anode to VSS). (Schottky diode

1N5817 is recommended for through hole and

MBRS120T3 is recommended for surface mount).

Figure 15. Supply Voltage Protection

AI02169

VCC

0.1

µF

DEVICE

VCC

VSS

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