Digital Transistor

Electrical Characteristics (at TJ=25°C unless otherwise noted)

Typical Rating and Characteristic Curves (ADTC143TM-HF)

0

2

6

10

12

2

6

Collector-Emitter Voltage, VCE (A)

4

10

100

1000

Fig.2 - hFE ― IC

Fig.1 - Static Characteristic

Collector Current, IC (mA)

0.1

100

1

10

Comchip Technology CO., LTD.

REV:A

Page 2

Parameter

Conditions

Min

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

IC = 50μA, IE = 0A

IC = 1mA, IB = 0A

IE = 50μA, IC = 0A

VCB = 50V, IE = 0A

VEB = 4V, IC = 0A

50

50

5

V

0.5

0.5

V

V

V

µA

µA

6.11

600

V

DC current gain

VCE = 5V, IC = 1mA

100

0.3

Input Resistor

Collector-emitter saturation voltage

kΩ

IC = 5mA, IB = 0.25mA

Typ

4.7

3.29

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

VCE(sat)

hFE

R1

0

1

3

5

8

4

Common

Emitter

Ta=25°C

IB=5µA

IB=5µA

10µA

15µA

20µA

25µA

30µA

35µA

40µA

45µA

50µA

Ta=100°C

Ta=25°C

VCE= 5V

AQW-JTR122

Transition frequency

VCE = 10V, IE = 5mA, f = 100MHz

250

MHz

fT

Resistance ratio

R2/R1

10

8

12