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M50FW080 Datasheet(PDF) 15 Page - STMicroelectronics |
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M50FW080 Datasheet(HTML) 15 Page - STMicroelectronics |
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15 / 56 page ![]() M50FW080 Signal descriptions 15/55 2.2 Address/Address Multiplexed (A/A Mux) signal descriptions For the Address/Address Multiplexed (A/A Mux) Interface see Figure 2 and Table 2. 2.2.1 Address inputs (A0-A10) The Address Inputs are used to set the Row Address bits (A0-A10) and the Column Address bits (A11-A19). They are latched during any bus operation by the Row/Column Address Select input, RC. 2.2.2 Data inputs/outputs (DQ0-DQ7) The Data Inputs/Outputs hold the data that is written to or read from the memory. They output the data stored at the selected address during a Bus Read operation. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine. The Data Inputs/Outputs, DQ0-DQ7, are latched during a Bus Write operation. 2.2.3 Output Enable (G) The Output Enable, G, controls the Bus Read operation of the memory. 2.2.4 Write Enable (W) The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface. 2.2.5 Row/Column Address Select (RC) The Row/Column Address Select input selects whether the Address Inputs should be latched into the Row Address bits (A0-A10) or the Column Address bits (A11-A19). The Row Address bits are latched on the falling edge of RC whereas the Column Address bits are latched on the rising edge. 2.2.6 Ready/Busy Output (RB) The Ready/Busy pin gives the status of the memory’s Program/Erase Controller. When Ready/Busy is Low, VOL, the memory is busy with a Program or Erase operation and it will not accept any additional Program or Erase command except the Program/Erase Suspend command. When Ready/Busy is High, VOH, the memory is ready for any Read, Program or Erase operation. |
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