5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range of -55

℃ to +125℃ (unless otherwise noted)(1)

MIN

MAX

UNIT

IF(max)

Maximum Input forward current

15

mA

VCEO

Collector-emitter voltage

35

V

VECO

Emitter-collector voltage

7

V

IFP

Input pulse forward current (1μs width)

1

A

VR

Input reverse voltage

7

V

PI

Input power dissipation

86

mW

IC

Collector current

15

mA

PC

Collector power dissipation

86

mW

PT

Total power dissipation

172

mW

TA

Ambient temperature

–55

125

°C

TJ

Junction temperature

–55

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under the operational sections of this document.

If used outside the listed operational conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and

this may affect device reliability, functionality, performance, and shorten the device lifetime.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)

±2000

V

Charged device model (CDM), per JEDEC specification JESD22C101, all pins (2)

±1000

(1)

JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range of -55

℃ to +125℃ (unless otherwise noted)

MIN

NOM

MAX

UNIT

IF(ON)

Input ON-state forward current

0.7

10

mA

VR

Input reverse voltage

5

V

VCEO

Collector-emitter voltage

-5

30

V

TA

Ambient temperature

-55

125

°C

5.4 Thermal Information

THERMAL METRIC (1)

ISOS510-SP

UNIT

DFG (SOIC)

4 PINS

RθJA

Junction-to-ambient thermal resistance

283.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

173.1

°C/W

RθJB

Junction-to-board thermal resistance

201.4

°C/W

ψJT

Junction-to-top characterization parameter

125.1

°C/W

ψJB

Junction-to-board characterization parameter

198.0

°C/W

(1)

For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application note.

ISOS510-SP

SLVSJM3 – MAY 2026

www.ti.com

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