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2N6213 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6213
Description  Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6213 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  2N6213 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6213 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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Silicon PNP Power Transistor
2N6213
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCE(sat) = -2V(Max.)@ IC= -1A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -350V(Min)
APPLICATIONS
·
Designed for use in power amplifier and switching circuits
Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-350
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-5
A
IB
Collector Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
35
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~200
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
5.0
℃
/W


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