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CLA30E1200PB Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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CLA30E1200PB Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Schottky Barrier Rectifier CLA30E1200PB www.iscsemi.com 1 FEATURES · With TO-220 packaging · High heat dissipation and durability · Thermowatt construction for low thermal · Glass passivated junctions and center gate fire for greater parameter uniformity and stability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDRM Repetitive peak off-state voltage 1200 V VRRM Repetitive peak reverse voltage 1200 V IT(AV) Average forward current,Tc=150℃ 30 A IT(RMS) RMS on-state current,Tc=150℃ 47 A ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;50HZ;Tc=125℃ ) 300 A PG(AV) Average gate power dissipation,Tp=8.3ms;Tc=70℃ 0.5 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ |
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