HSL285 datasheet(2/5 Pages) RENESAS

Part #	HSL285

Description	Silicon Schottky Barrier Diode for Detector

PDF	5 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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2 / 5 page

HSL285

Rev.2.00 May 17, 2006 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Reverse voltage

Average rectified current

Junction temperature

125

°C

Storage temperature

Tstg

−55 to +125

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

VF1



0.15

IF = 0.1 mA

Forward voltage

VF2



0.27

IF = 1 mA

Capacitance



0.3



VR = 0.5 V, f = 1 MHz

ESD-Capability *



C = 200 pF, RL = 0

Ω, Both forward

and reverse direction 1 pulse.

Notes

: 1. Failure criterion ; IR ≥ 100 µA at VR =0.5 V

2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip

part is considered as unquestioned. Please kindly consider soldering nature.

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