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STFW3N170 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # STFW3N170
Description  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STFW3N170 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
STFW3N170
www.iscsemi.com
1
FEATURES
·
Drain Source Voltage : VDSS= 1700V(Min)
·
Static Drain-Source On-Resistance :
RDS(on) = 13Ω(Max)
·
100% avalanche tested
DESCRIPTION
·
Switching Applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1700
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
2.6
A
IDM
Drain Current-Single Pulse
10.4
A
PD
Total Dissipation
63
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1s;TC = 25℃)
3.5
kV
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.0
℃
/W


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