BU806 datasheet(1/2 Pages) ISC

Part #	BU806

Description	Silicon NPN Darlington Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Darlington Power Transistor

BU806

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 200V(Min)

·

DC Current Gain-

: hFE= 1000(Min)@ IC= 5A

APPLICATIONS

·

This Darlington transistor is a high voltage ,high speed

device for use in horizontal deflection circuits in TV’s

and CRT’s

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.08

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector- Base Voltage

400

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

15

A

PC

Collector Power Dissipation

@TC=25℃

60

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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