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BUL118D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUL118D
Description  Silicon NPN Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL118D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
BUL118D
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= 400V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat): 0.5V(Max) @IC= 0.5A
APPLICATIONS
· Designed for use in lighting applications and low cost
switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-peak tp<5ms
6
A
IB
Base Current-Continuous
1.5
A
IBM
Base Current-peak tp<5ms
3
A
PC
Collector Power Dissipation
TC=25℃
60
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.08
℃
/W


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