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IRF830 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # IRF830
Description  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF830 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRF830 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRF830 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IRF830 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc N-Channel MOSFET Transistor
IRF830
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBO
L
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.25mA
500
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0V
--
--
25
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0V
--
--
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2.0
--
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 2.5A
--
--
1.5
Ω
VSD
Forward On-Voltage
IS= 4.5A; VGS= 0V
--
--
1.6
V
Ciss
Input Capacitance
VDS=25V,VGS=0V,f=1MHz
--
535
--
pF
Coss
Output Capacitance
--
63
--
Crss
Reverse Transfer Capacitance
--
4.7
--
td(on)
Turn−On Delay Time
VDD=250V,ID=6A,RG=25Ω
--
10
--
ns
tr
Rise Time
--
160
--
td(off)
Turn−Off Delay Time
--
25
--
tf
Fall Time
--
38
--
Qg
Total Gate Charge
VDD=400V,ID=6A,VGS=10V
--
14.4
--
nC
Qgs
Gate−Source Charge
--
2.8
--
Qgd
Gate−Drain Charge
--
6.8
--
trr
Reverse Recovery Time
VDD=250V,IS=6A,diF/dt=100A/us
--
270
--
ns
Qrr
Reverse Recovery Charge
--
1.9
--
uC



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