STD8NM60N datasheet(3/17 Pages) STMICROELECTRONICS

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STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N

Electrical ratings

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Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

DPAK/IPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

7 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

4.3

4.3 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

28 (1)

PTOT

Total dissipation at TC = 25 °C

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s;TC = 25 °C)

2500

dv/dt (3)

ISD ≤ 7A, di/dt ≤ 400A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

DPAK/IPAK

TO-220FP

Rthj-case

Thermal resistance junction-case

1.78

°C/W

Rthj-amb

Thermal resistance junction-amb

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

2.5

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAS, VDD = 50 V)

200

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