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M58CR032C Datasheet(PDF) 49 Page - STMicroelectronics |
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M58CR032C Datasheet(HTML) 49 Page - STMicroelectronics |
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49 / 63 page  49/63 M58CR032C, M58CR032D Table 31. CFI Query System Interface Information Table 32. Device Geometry Definition Offset Data Description Value 1Bh 0017h VDD Logic Supply Minimum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 1.7V 1Ch 0020h VDD Logic Supply Maximum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 2V 1Dh 0017h VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 1.7V 1Eh 00C0h VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 12V 1Fh 0004h Typical time-out per single Byte/Word program = 2n µs 16µs 20h 0003h Typical time-out for Quadruple Word Program = 2n µs 8µs 21h 000Ah Typical time-out per individual Block Erase = 2n ms 1s 22h 0000h Typical time-out for full Chip Erase = 2n ms NA 23h 0003h Maximum time-out for Word Program = 2n times typical 128µs 24h 0004h Maximum time-out for Quadruple Word = 2n times typical 128µs 25h 0002h Maximum time-out per individual Block Erase = 2n times typical 4s 26h 0000h Maximum time-out for Chip Erase = 2n times typical NA Offset Word Mode Data Description Value 27h 0016h Device Size = 2n in number of Bytes 4 MByte 28h 29h 0001h 0000h Flash Device Interface Code description x16 Async. 2Ah 2Bh 0003h 0000h Maximum number of Bytes in multi-Byte program or page = 2n 8 Byte 2Ch 0002h Number of Erase Block Regions within the device bit 7 to 0 = x = number of Erase Block Regions It specifies the number of regions within the device containing one or more contiguous Erase Blocks of the same size. 2 |
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