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ISCF80137 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCF80137 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISCF80137 eq NVH4L030N120M3S SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 1mA 1200 -- -- V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 15mA 2.0 -- 4.5 V RDS(on) Drain-Source On-stage Resistance VGS= 18V, ID= 30A -- 29 39 mΩ IGSS Gate Source Leakage Current VGS= -10/+22V, VDS= 0V -- -- ± 1 uA IDSS Zero Gate Voltage Drain Current VDS = 1200V, VGS = 0V -- -- 100 uA VSD Diode Forward Voltage ISD= 30A, VGS= -3V -- 4.6 -- V PACKAGE OUTLINE (UNIT: mm) |
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