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SGP02N120 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # SGP02N120
Description  IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

SGP02N120 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  SGP02N120 Datasheet HTML 1Page - Inchange Semiconductor Company Limited SGP02N120 Datasheet HTML 2Page - Inchange Semiconductor Company Limited SGP02N120 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2066
eq SGP02N120
IGBT
www.iscsemi.com
2
STATIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0, IC= 0.1mA
1200
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE, IC= 0.1mA
3
4
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A, VCE= 15V,
TC=25℃
2.5
3.0
3.6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A, VCE= 15V,
TC=150℃
--
3.7
4.3
V
ICES
Zero Gate Voltage Collector Current
VCE=1200V, VGE=0
--
--
25
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V, VCE=0
--
--
±
100
nA
gfs
Transconductance
VCE=20V,IC=2A
--
1.0
--
S
DYNAMIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1.0MHz
--
100
--
pF
Coes
Output Capacitance
--
11
--
Cres
Reverse Transfer Capacitance
--
4
--
Qg
Gate Charge
VGE = 15V, IC= 2A,
VCE = 960V
--
10
--
nC
LE
Internal Emitter Inductance
--
7
--
nH
SWITCHING CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
td(on)
Turn-on Delay Time
VGE = 15V,
IC= 1A,
VCE = 800V,
RG=240Ω
TJ=25℃
--
13
--
ns
tr
Turn-on Rise Time
--
6.5
--
td(off)
Turn-off Delay Time
--
200
--
tf
Turn-off Fall Time
--
30
--
Eon
Turn-on switching losses
--
0.10
--
mJ
Eoff
Turn-off switching losses
--
0.06
--
Ets
Total switching losses
--
0.15
--



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