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STPR810D Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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STPR810D Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
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1 / 2 page ![]() STPR810D thru STPR820D FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any Dim. A B C D E F G H J K L M N Q Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Dimensions TO-220AC STPR810D STPR820D VRRM V 100 200 VRMS V 70 140 VDC V 100 200 A=Anode, C=Cathode, TAB=Cathode C A Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=120 C IFSM Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC METHOD) TP=10ms TP=8.3ms Maximum Forward Voltage Pulse Width=300us Duty Cycle IF=8A @TJ=125 C IF=16A @TJ=125 C IF=16A @TJ=25 C VF IR Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ=25 C @TJ=100 C CJ Typical Junction Capacitance (Note 1) TRR Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance TJ, TSTG Operating and Storage Temperature Range Maximum Ratings 8.0 80 90 0.99 1.20 1.25 50 600 80 30 3.0 -55 to +150 A A V Unit uA pF ns o o o o o o ROJC C/W o C o NOTES: 1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. C(TAB) C A Ultra Fast Recovery Diodes |
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