UPC251, UPC1458

R03DS0118EJ0100 Rev.1.00

Page 3 of 8

Feb.18.25

ELECTRICAL CHARACTERISTICS (TA = 25 °C, V ± = ±15 V)

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

Test Condition

Input Offset Voltage

VIO

±1.0

±6.0

mV

RS ≤ 10 kΩ

Average VIO Temperature Drift

ΔVIO/ΔT

±3

μV/°C RS ≤ 10 kΩ

Input Offset Current

IIO

±20

±200

nA

Input Bias Current Note6

IB

80

500

nA

Input Impedance

RI

0.3

1.0

MΩ

Large Signal Voltage Gain

AV

20000

160000

RL ≥ 2 kΩ, VO = ±10 V

Supply Current Note7

ICC

3.0

5.6

mA

IO = 0 A

Power Consumption

Pd

90

170

mW

IO = 0 A

Common Mode Rejection Ratio

CMR

70

90

dB

RS ≤ 10 kΩ

Supply Voltage Rejection Ratio

SVR

30

150

μV/V

RS ≤ 10 kΩ

Output Voltage Swing

Vom

±12

+14

-12

V

RL ≥ 10 kΩ

Output Voltage Swing

Vom

±10

+13

-11

V

RL ≥ 2 kΩ

Common Mode Input Voltage

Range

VICM

V + -0.5

V - +2

V

Channel Separation

120

dB

f = 10 Hz, RL = 2 kΩ

【

Note】 6. Input bias currents flow out from IC. Because each currents are base current of NPN-transistor on input

stage.

7. This current flows irrespective of the existence of use.

APPLICATION CIRCUIT EXAMPLE

+

-

10 kΩ

100 kΩ

-15 V

+15 V

-15 V

+15 V

10 kΩ

VR1

30 kΩ

100 kΩ

1/2

+

-

-15 V

+15 V

1/2

0.1 μF

VR3

200 kΩ

VR2

1 MΩ

50 kΩ

三角波出力

方形波出力

Vom +

0

Vom -

Square wave

output

Triangle wave

output