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M59DR032A Datasheet(PDF) 19 Page - STMicroelectronics |
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M59DR032A Datasheet(HTML) 19 Page - STMicroelectronics |
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19 / 38 page ![]() 19/38 M59DR032A, M59DR032B POWER SUPPLY Power Down The memory provides Reset/Power Down control input RP. The Power Down function can be acti- vated only if the relevant Configuration Register bit is set to ’1’. In this case, when the RP signal is pulled at VSS the supply current drops to typically ICC2 (see Table 22), the memory is deselected and the outputs are in high impedance.If RP is pulled to VSS during a Program or Erase operation, this operation is aborted in tPLQ7V and the memory content is no longer valid (see Reset/Power Down input description). Power Up The memory Command Interface is reset on Pow- er Up to Read Array. Either E or W must be tied to VIH during Power Up to allow maximum security and the possibility to write a command on the first rising edge of W. Supply Rails Normal precautions must be taken for supply volt- age decoupling; each device in a system should have the VDD rails decoupled with a 0.1µF capac- itor close to the VDD, VDDQ and VSS pins. The PCB trace widths should be sufficient to carry the re- quired VDD program and erase currents. Table 21. Program, Erase Times and Program, Erase Endurance Cycles (TA = 0 to 70°C; VDD = VDDQ = 1.65V to 2.2V, VPP = VDD unless otherwise specified) Note: 1. Max values refer to the maximum time allowed by the internal algorithm before error bit is set. Worst case conditions program or erase should perform significantly better. 2. Excludes the time needed to execute the sequence for program instruction. Parameter M59DR032 Unit Min Max (1) Typ Typical after 100k W/E Cycles Parameter Block (4 KWord) Erase (Preprogrammed) 2.5 0.15 0.4 sec Main Block (32 KWord) Erase (Preprogrammed) 10 1 3 sec Bank Erase (Preprogrammed, Bank A) 2 6 sec Bank Erase (Preprogrammed, Bank B) 10 30 sec Chip Program (2) 20 25 sec Chip Program (DPG, VPP = 12V) (2) 10 sec Word Program 200 10 10 µs Program/Erase Cycles (per Block) 100,000 cycles |
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