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M59MR032CGC Datasheet(PDF) 10 Page - STMicroelectronics |
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M59MR032CGC Datasheet(HTML) 10 Page - STMicroelectronics |
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10 / 49 page ![]() M59MR032C, M59MR032D 10/49 Table 8. User Bus Operations (1) Note: 1. X = Don’t care. Table 9. Read Electronic Signature (AS and Read CFI instructions) (1) Note: 1. Addresses are latched on the rising edge of L input. Table 10. Read Block Protection (AS and Read CFI instructions) (1) Note: 1. Addresses are latched on the rising edge of L input. 2. A locked block can be unprotected only with WP at VIH. Operation E G W RP WP ADQ0-ADQ15 Write VIL VIH VIL VIH VIH Data Input Output Disable VIL VIH VIH VIH VIH Hi-Z Standby VIH XX VIH VIH Hi-Z Reset / Power-down X X X VIL VIH Hi-Z Block Locking VIL XX VIH VIL X Code Device E G W A0-A7 A8-A20 Data Manufacturer Code VIL VIL VIH 00h Don’t Care 0020h Device Code M59MR032C VIL VIL VIH 01h Don’t Care 00A4h M59MR032D VIL VIL VIH 01h Don’t Care 00A5h Block Status E G W A0-A7 A8-A11 A12-A20 Data Protected and unlocked VIL VIL VIH 02h Don’t Care Block Address 0001 Unprotected and unlocked VIL VIL VIH 02h Don’t Care Block Address 0000 Protected and locked VIL VIL VIH 02h Don’t Care Block Address 0003 Unprotected and locked (2) VIL VIL VIH 02h Don’t Care Block Address 0002 DEVICE OPERATIONS The following operations can be performed using the appropriate bus cycles: Address Latch, Read Array (Random, and Page Modes), Write com- mand, Output Disable, Standby, Reset/Power- down and Block Locking. See Table 8. Address Latch. In asynchronous operation, the address is latched on the rising edge of L input; in burst mode, the address is latched either by L go- ing high or with a rising/falling edge of K, depend- ing on the clock configuration. Read. Read operations are used to output the contents of the Memory Array, the Electronic Sig- nature, the Status Register, the CFI, the Block Protection Status, the Configuration Register sta- tus and the Security Code. Read operation of the Memory Array may be per- formed in asynchronous page mode or synchro- nous burst mode. In asynchronous page mode data is internally read and stored in a page buffer. The page has a size of 4 words and is addressed by ADQ0 and ADQ1 address inputs. According to the device configuration the following Read operations: Electronic Signature - Status Register - CFI - Block Protection Status - Configu- ration Register Status - Security Code must be ac- cessed as asynchronous read or as single synchronous burst mode (see Figure 4). Both Chip Enable E and Output Enable G must be at VIL in order to read the output of the memory. |
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