M58LW032C110N6F datasheet(24/61 Pages) STMICROELECTRONICS

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M58LW032C

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Table 6. Configuration Codes

Note: 1. DQ2-DQ7 are reserved

2. When STS pin is pulsing it remains Low for a typical time of 250ns.

Table 7. Read Electronic Signature

Note: 1. SBA is the Start Base Address of each block, BCR is Configuration Register data, PRD is Protection Register Data.

2. Base Address, refer to Figure 8 and Table 8 for more information.

Table 8. Read Protection Register

Configuration

Code

DQ1

DQ2

Mode

STS Pin

Description

00h

Ready/Busy

VOL during P/E

operations

Hi-Z when the

memory is ready

The STS pin is Low during Program and

Erase operations and high impedance when

the memory is ready for any Read, Program

or Erase operation.

01h

Pulse on Erase

complete

Pulse Low then

High when

operation

completed(2)

Supplies a system interrupt pulse at the end

of a Block Erase operation.

02h

Pulse on

Program

complete

Supplies a system interrupt pulse at the end

of a Program operation.

03h

Pulse on Erase

or Program

complete

Supplies a system interrupt pulse at the end

of a Block Erase or Program operation.

Code

Address (A21-A1)

Data (DQ15-DQ0)

Manufacturer Code

000000h

0020h

Device Code

000001h

8822h

Block Protection Status

SBA+02h

0000h (Block Unprotected)

0001h (Block Protected)

Configuration Register

000005h

BCR

Protection Register

000080h(2)

PRD

Word

Use

A7A6A5

A4A3

A2A1

Lock

Factory, User

0000

Factory (Unique ID)

0000

Factory (Unique ID)

0000

Factory (Unique ID)

0000

Factory (Unique ID)

0001

User

0001

User

0001

User

0001

User

0010

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