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20ETS12S Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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20ETS12S Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Rectifier Diode 20ETS12S www.iscsemi.com 1 FEATURES · Low forward voltage drop · Industrial grade qualified · Industrial grade qualified APPLICATIONS · Input rectification · Pair with same-package output rectifiers · Match HPP power switches ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Repetitive peak reverse voltage 1200 V IF(AV) Average Rectified Forward Current， （ TC=105 ℃, 180°conduction half sine wave） 20 A I2t Maximum I2t for fusing 10 ms sine pulse, rated VRRM applied 316 A2S 10 ms sine pulse, no voltage reapplied 442 A2S IFSM Maximum peak one cycle non-repetitive surge current, 10 ms sine pulse, rated VRRM applied 250 A 10 ms sine pulse, no voltage reapplied 300 A TJ Max. Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.3 ℃ /W |
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