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BD330 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD330 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon PNP Power Transistor BD330 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -20V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -0.5V(Max) @IC= -2A APPLICATIONS · Power switching and amplification, especially in portable equipment or e.g. car radio output stages ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB peak base current -1 A PC Total Power Dissipation 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 3 2 1 |
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Similar Description - BD330 |
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