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BFR193W Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BFR193W
Description  Silicon NPN RF Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BFR193W Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN RF Power Transistor
BFR193W
www.iscsemi.com
1
FEATURES
·
Qualification report according to AEC-Q101 available
·
Pb-free (RoHS compliant) package
APPLICATIONS
·
Low noise, High-gain amplifiers up to 2 GHz
·
Linear broadband amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
80
mA
PC
Collector Power Dissipation
@TC<63℃
580
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP MAX
UNIT
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
-
-
100
nA
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
-
-
1.0
μA
hFE
DC Current Gain
IC= 20mA ; VCE= 6V
70
-
140
-
fT
Current-Gain—Bandwidth Product
IC= 20mA ; VCE= 6V ;f= 1GHz
-
8
-
GHz
|
S21e|2
Insertion Power Gain
IC= 20mA ; VCE= 6V; f= 1GHz
-
13
-
dB
NF
Noise Figure
IC =5mA, VCE = 6V, f= 1GHz
-
1.5
-
dB


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