BFR93AW datasheet(1/2 Pages) ISC

Part #	BFR93AW

Description	Silicon NPN RF Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN RF Power Transistor

BFR93AW

www.iscsemi.com

1

FEATURES

·

High power gain

·

Gold metallization ensures excellent reliability

APPLICATIONS

·

It is designed for use in RF amplifiers,mixers and

oscillators with signal frequencies up to 1 GHz.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

2

V

IC

Collector Current-Continuous

90

mA

PC

Collector Power Dissipation

@TC<93℃

300

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

ICBO

Collector Cutoff Current

VCB=10V; IE= 0

-

100

nA

IEBO

Emitter Cutoff Current

VEB= 2V; IC= 0

-

10

μA

hFE

DC Current Gain

IC= 7mA ; VCE= 3V

70

-

140

-

fT

Current-Gain—Bandwidth Product

IC= 7mA ; VCE= 3V

4.0

4.5

-

GHz

|

S21e|2

Insertion Power Gain

IC= 5mA ; VCE= 3V;f= 1GHz

-

11

-

dB

NF

Noise Figure

IC = 5mA, VCE = 3V, f= 1GHz

-

1.6

-

dB

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