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FFD10UP20S Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FFD10UP20S Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Ultrafast Diode FFD10UP20S www.iscsemi.com 1 FEATURES · ultrafast reverse recovery · low forward voltage vf · avalanche energy rated APPLICATIONS · smps output rectification · freewheeling & clamping circuits · industrial power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak repetitive Reverse voltage 200 V VRWM Working Peak Reverse voltage 200 V IF(AV) Average rectified forward current,TC=115℃ 10 A IFSM non-repetitive peak surge current 60Hz Single Half-Sine Wave 100 A TJ Junction temperature 175 ℃ Tstg storage temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance, junction-to-case 3.0 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage IF= 10A -- 1.15 V IR Reverse leakage current Rate DC Voltage -- 100 uA |
Similar Part No. - FFD10UP20S |
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Similar Description - FFD10UP20S |
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