BP-104-FAS datasheet(5/19 Pages) AMSOSRAM

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BP 104 FAS

DATASHEET

5 | Version 1.6 | 2024-12-17

Characteristics

A = 25 °C

Parameter

Symbol

Values

Wavelength of max sensitivity

S max

typ.

880 nm

Spectral range of sensitivity

10%

typ.

730 ... 1100

Radiant sensitive area

typ.

4.84 mm²

Dimensions of active chip area

L x W

typ.

2.2 x 2.2

mm x mm

Half angle

typ.

60 °

Dark current

R = 10 V

typ.

max.

2 nA

30 nA

Spectral sensitivity of the chip

λ = 870 nm

typ.

0.63 A / W

Quantum yield of the chip

λ = 870 nm

typ.

0.90 Electrons

/ Photon

Open-circuit voltage

e = 0.5 mW/cm²; λ = 870 nm

min.

typ.

250 mV

330 mV

Short-circuit current

e = 0.5 mW/cm²; λ = 870 nm

typ.

16 µA

Rise time

R = 5 V; RL = 50 Ω; λ = 850 nm

typ.

0.02 µs

Fall time

R = 5 V; RL = 50 Ω; λ = 850 nm

typ.

0.02 µs

Forward voltage

F = 100 mA; E = 0

typ.

1.3 V

Capacitance

R = 0 V; f = 1 MHz; E = 0

typ.

48 pF

Temperature coefficient of voltage

typ.

-2.6 mV / K

Temperature coefficient of short-circuit current

λ = 870 nm

typ.

0.03 % / K

Noise equivalent power

R = 10 V; λ = 870 nm

NEP

typ.

0.040 pW /

Hz1/2

Detection limit

R = 5 V; λ = 870 nm

typ.

5.5e12 cm x

Hz1/2 / W

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