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MBR2X160A200 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR2X160A200 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() MBR2X160A200 D Schottky Rectifier Diode www.iscsemi.com 1 DESCRIPTION · High Surge Capability · Electrically Isolated Base Plate · Not ESD Sensitive APPLICATIONS · SMPS · UPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Maximum recurrent peak reverse voltage 200 V VDC Maximum DC blocking voltage 200 V VRMS Maximum RMS Voltage 140 V IFAV Average forward current,TC=110℃, (per pkg) 320 A IFSM Peak forward surge current,8.3ms,half sine(per leg) 2000 A Rth j-c Maximum thermal resistance junction to case(per leg) 0.3 ℃ /W TJ Operating temperature -40~150 ℃ Tstg Storage temperature -40~150 ℃ Visol Isolation voltage,AC,1min 2500 V ELECTRICAL CHARACTERISTICS(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF Maximum instantaneous forward voltage (per leg) IF= 160A -- -- 0.92 V IR Maximum instantaneous reverse current at rated DC blocking voltage (per leg) -- -- 3.0 mA |
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