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MBRD1040 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRD1040 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Rectifiers Diode MBRD1040 www.iscsemi.com 1 FEATURES · High surge capacity · High current capacity · low forward voltage drop APPLICATIONS · free wheeling circuits · polarity protection ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak repetitive Reverse voltage 40 V VRMS RMS Voltage 28 V VDC DC Blocking Voltage 40 V IF(AV) Average Forward Rectified Current,TA=100℃ 10 A IFSM Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load 150 A TJ Junction temperature 150 ℃ Tstg storage temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance, junction-to-case 2.2 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage IF= 10A -- 0.7 V IR Reverse leakage current Rate DC Voltage -- 100 uA |
Similar Part No. - MBRD1040 |
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Similar Description - MBRD1040 |
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