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MGD633 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MGD633
Description  IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MGD633 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  MGD633 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MGD633 Datasheet HTML 2Page - Inchange Semiconductor Company Limited MGD633 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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MGD633
IGBT
www.iscsemi.com
1
FEATURES
· Low Saturation Voltage
· High Speed Switching
APPLICATIONS
· Microwave Oven
· Inverter Circuit
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
600
V
VGE
Gate-Emitter Voltage
±
30
V
IC
Collector Current
TC=25℃
50
A
TC=100℃
37
A
ICM
Pulsed Collector Current,
PW≤1ms,duty cycle≤1%
100
A
IF
Continuous Diode Forward Current
40
A
IFM
Diode Pulsed Current,
PW≤1ms,duty cycle≤1%
100
A
PD
Power Dissipation
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction
to Case
IGBT
0.83
℃
/W
DIODE
1.67


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