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RJP4301APP Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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RJP4301APP Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() RJP4301APP IGBT www.iscsemi.com 1 FEATURES · High Speed Switching · Isolated TO-220F package · High pulse collector current capability APPLICATIONS · Strobe flash · Photographic flash discharge circuit · Capacitor pulse discharge equipment ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 430 V VGE Gate-Emitter Voltage ± 33 V ICM Pulsed Collector Current 200 A PD Power Dissipation 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNI T Rth j-c Thermal Resistance,Junction to Case 4.17 ℃ /W |
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