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SJ02N170 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SJ02N170 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor SJ02N170 www.iscsemi.com 1 FEATURES · Drain Current -ID= 65A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 25.5mΩ(Max)@VGS= 10V APPILICATIONS · DC/DC Converter · Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBO L PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous TC=25℃ 65 A TC=100℃ 41 A IDM Drain Current-Pulse 260 A PD Total Dissipation 272 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.46 ℃ /W |
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