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MJE5852 Datasheet(PDF) 1 Page - STMicroelectronics |
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MJE5852 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s PNP TRANSISTOR s HIGH VOLTAGE CAPABILITY APPLICATIONS: s SWITCHING REGULATORS s MOTOR CONTROL s INVERTERS DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching speed and high voltage capability. It is intended for use in high frequency and efficiency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM July 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 450 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 8 A ICM Collector Peak Current (tp < 5ms) 16 A IB Base Current 4 A IBM Base Peak Current (tp < 5ms) 8 A Ptot Total Dissipation at Tc ≤ 25 oC80 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC For PNP type voltage and current values are negative. 1 2 3 TO-220 1/4 |
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