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MSC1004 Datasheet(PDF) 1 Page - STMicroelectronics |
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MSC1004 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 3 page ![]() RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .280 2L FL (SO68) epoxy sealed . 1025 - 1150 MHz . RUGGEDIZED VSWR ∞:1 . INTERNAL INPUT MATCHING . LOW THERMAL RESISTANCE . POUT = 4.0 W MIN. WITH 9.0 dB GAIN DESCRIPTION The MSC1004M is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output applications. These devices are capable of withstanding a ∞:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and auto- matic bonding techniques ensure high reliability and product consistency. The MSC1004M is housed in the IMPAC ™ pack- age with internal input matching. PIN CONNECTION BRANDING 1004M ORDER CO DE MSC1004M ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Valu e Un it PDISS Power Dissipation* (TC ≤ 100°C) 18 W IC Device Current* 650 mA VCC Collector-Supply Voltage* 32 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +150 °C RTH(j-c) Junction-Case Thermal Resistance* 5 °C/W *Applies only to rated RF amplifier operation MSC1004M 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA June 12, 1995 1/3 |
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