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MSC81002 Datasheet(PDF) 1 Page - STMicroelectronics |
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MSC81002 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() October 1992 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .230 2L STUD (S016) hermetically sealed . EMITTER BALLASTED . VSWR CAPABILITY ∞:1 @ RATED CONDITIONS . HERMETIC STRIPAC® PACKAGE . POUT = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHz DESCRIPTION The MSC81002 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a re- fractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC81002 was designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. PIN CONNECTION BRANDING 81002 ORDER CODE MSC81002 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 75°C) 6.25 W IC Device Current* 200 mA VCC Collector-Supply Voltage* 35 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation MSC81002 1. Collector 3. Emitter 2. Base THERMAL DATA 1/5 |
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